Features:
UHV system
8 targets
Off-axis deposition option
DC and RF generators
Full automation for deposition control
+/- 2.5% thickness uniformity over 4” wafer
Substrate temperature up to 850oC
+/- 0.1oC substrate temperature stability
This equipment was funded through the Illinois MRSEC NSF Award Number DMR-1720633. Its use should be acknowledged in any published works, with the wording: “The authors acknowledge the use of facilities and instrumentation at the Materials Research Laboratory Central Research Facilities, University of Illinois, partially supported by NSF through the University of Illinois Materials Research Science and Engineering Center DMR-1720633.” Please also send a copy of the publication (email or hard copy), or the publication information (citation, DOI, or conference name and paper/poster title) to [email protected].