Shaloo Rakheja

Research Interests

• Compact Modeling of wide bandgap and ultrawide bandgap semiconductor devices for high-frequency and high-power applications
• Modeling and simulation of spin-based devices for low-power non-volatile memory and brain-inspired computing
• Modeling of reconfigurable devices using van der Waals materials and ferroelectrics for in-memory computing

Research Statement

My research in theoretical device physics lies at the intersection of materials science and circuit design. I am engaged in understanding, predicting, and modeling physical phenomena in materials that drive their functional behavior and enable multifaceted applications in the domains of low-power logic and memory, brain-inspired and secure computing, and wireless communication. The device models I create are predictive in nature, provide guidance to experiments, reduce costs of test-structures, improve the turnaround and success rate of laboratory tests by preventing trial and error, and enable correct interpretation of experimental data. Because my models are multi-scale in nature, spanning from first-principles calculations to circuit-compatible implementations, my research has advanced our capability for materials-to-circuits co-design for a wide range of technologically relevant applications. This means that my computational platforms empower device technologists and circuit designers to rapidly exchange scientific ideas and strengthen the innovation loop across the design hierarchy.

Over my academic career, I have conducted foundational research in materials and devices that not only push the envelope of basic science but also have the potential to create pervasive and impactful electronic applications. For example, my work in wide bandgap semiconductors can lead to superior near-terahertz communication and sensing systems designed to access data from extreme environments. Such systems can enable major breakthroughs for several scientific investigations including energy generation, national security, and space applications. Meanwhile, I have expanded my research into power electronics applications of ultrawide bandgap semiconductors, prominently diamond and gallium oxide, which have the potential to reduce electricity losses in high-voltage transmission by more than 40% and dramatically improve the efficiency of AI data centers. My work in modeling and designing non-volatile and highly energy-efficient spintronic and ferroelectric devices can address one of the grand societal challenges related to reducing the power consumption of computing systems.

In the area of digital and high-frequency electronics, I have developed models to describe the behavior of III-nitride high-electron mobility transistors (HEMTs), photoconductive switches using wide bandgap semiconductors, Schottky-barrier transistors, graphene plasmonic interconnects, and nano-antennas that can operate in the terahertz regime. My research is the first to report a III-nitride HEMT compact model that faithfully captures the physics of quasi-ballistic electron transport—i.e., when electron scatterings are suppressed in the channel. I have also highlighted the limits, challenges, and opportunities of scaling III-nitride HEMTs down to the cryogenic temperatures, approximately 4 K, needed for interfacing of electronic circuitry with the quantum computer circuitry. My group was the first to develop a physical model interface for commercial TCAD solvers that allows accurate simulation of sub-gap excitation in diamond dual-gated (i.e., both electrically and optically) field-effect transistor, which offers complete electromagnetic interference immunity, intrinsic galvanic isolation, and compact design by eliminating bulky isolation.

I have also contributed significantly to the fundamental understanding of noisy dynamics in magnetic structures and applications of magnetic materials to nonvolatile memory, probabilistic computing, and reconfigurable circuits that are inherently secure against hardware attacks. More recently, I was invited to present at IEEE NANO, where I shared my work on multidomain switching dynamics in hafnium oxide—a material rapidly emerging as a leading candidate for non-volatile memory devices that can be seamlessly integrated with silicon CMOS to enable enhanced functionality. To tackle the multi-scale and multi-physics problems for various nanoscale devices, I have developed new numerical techniques employing GPUs that allow the massive parallelization of Monte-Carlo and various other optimization algorithms for specific applications.

I currently serve as Director of the Center for Advanced Semiconductor Chips with Accelerated Performance (ASAP), an NSF Industry-University Cooperative Research Center that drives pathfinding semiconductor research through sustained engagement with industry. ASAP Center partners with major semiconductor companies, startups, and national labs to develop strategies for reducing the energy consumption of computing systems. The ASAP Center has opened doors to new inter-disciplinary collaborations amongst more than 15 faculty and 30 students who are working together to develop new information processing solutions with orders of magnitude improvement in system performance. Industry members include AFRL, AMD, IBM, Intel, Laboratory of Physical Sciences, MIT Lincoln Lab, Raytheon/Collins, Sandia National Lab, Seagate, Synopsys, TSMC.

Since early 2025, I have also led a statewide, CHIPS+ Act-funded initiative—the Illinois Semiconductor Workforce Network (ISWN)—to prepare the next generation of semiconductor professionals. ISWN delivers hands-on fabrication training to students at community colleges in Illinois, equipping them with the skills needed to thrive in this critical industry. By bringing together perspectives from the broader Illinois ecosystem, ISWN is developing curricula aligned with industry needs, offering career counseling, and connecting students with employers. This effort not only opens doors to high-quality jobs but also helps meet the rapidly growing workforce demands of the industry.

Undergraduate Research Opportunities

I invite motivated undergraduate students from Electrical Engineering and Physics to reach out to me for research opportunities in the area of modeling and simulation of nanoelectronic devices, as well as the co-design and co-optimization of materials, devices, and circuits for energy-efficient computing.

Graduate Research Opportunities

If you are interested in conducting your doctoral research in my group, please email me with a copy of your CV, research statement, and a short slide deck with an overview of your prior research experience and future goals. Please note that I will not be responding to inquiries that are outside of my current research interests.

Primary Research Area

• OLD Quantum Nanoelectronics and Nanophotonics

Research Areas

• Nanoscale Devices For Ultralow Power Computing
• OLD Quantum Nanoelectronics and Nanophotonics
• Power Electronics
• Ultra High Speed Electronic System

For More Information

• Center for Advanced Semiconductor Chips with Accelerated Performance (ASAP)
• G-Scholar Page
• Research Gate Profile
• Illinois Semiconductor Workforce Network (ISWN)

Books Authored or Co-Authored (Original Editions)

• The Next Era of Hardware Security: A Perspective on Emerging Technologies for Secure Electronics, Springer, 2021. ISBN-13: 978-3030857912 ISBN-10: 3030857913 Authors: Nikhil Rangarajan, Satwik Patnaik, Johann Knechtel, Shaloo Rakheja, Ozgur Sinanoglu

Chapters in Books

• S. Rakheja, A. Ceyhan, A. Naeemi. Interconnect considerations. CMOS and Beyond: Logic Switches for Terascale Integrated Circuits. K. Kuhn (Eds.), ch. 15, pp. 911-960, Cambridge University Press, 2015. (invited)
• S. Rakheja, A. Naeemi. Communicating novel computational state variables in post- CMOS logic. IEEE Nanotechnology Magazine, vol. 7, no. 1, pp. , 2013. (invited)
• S. Rakheja, A. Naeemi. On physical limits and challenges of graphene nanoribbons as interconnects for all-spin logic. Nanoelectronic Device Applications Handbook. J. Morris and K. Iniewski (Eds.), ch. 64, pp. 807-826, CRC Press, 2015. (invited)
• S. Rakheja, A. Naeemi. Interconnects for alternative state variables. Graphene Nanoelectronics: From Materials to Circuits. R. Murali (Ed.), ch. 5, pp. 113-136, Springer, 2011. (invited)
• Contributed to the chapter on Emerging Interconnects. International Technology Roadmap for Semiconductors (ITRS), 2011. (invited)

Monographs

• N. Rangarajan, S. Ament, A. Parthasarthy, S. Rakheja. (2017). Solving the stochastic Landau-Lifshitz-Gilbert-Slonczewski equation for monodomain nanomagnets : A survey and analysis of numerical techniques. URL: https://arxiv.org/abs/1607.04596

Selected Articles in Journals

• Afrid, S. M. T. S., Zhao, H. L., van der Zande, A. M., & Rakheja, S. (2025). Strain-tunable inter-valley scattering defines universal mobility enhancement in n-and p-type 2D TMDs. arXiv preprint arXiv:2511.08975. (accepted for publication in npj 2D Materials and Applications). 
• Dastider, Ankan Ghosh, Matt Grupen, Ashwin Tunga, and Shaloo Rakheja. "Physics-based Full-band GaN HEMT Simulation Suggests Upper Bound of LO Phonon Lifetime." J. Appl. Phys. 21 February 2026; 139 (7): 074502.
• Qian, S., Shukla, A., & Rakheja, S. (2025). Influence of thermal noise on the field-driven dynamics of the non-collinear antiferromagnet Mn3Sn. Applied Physics Letters, 127(20).
• Kang, J., Lee, H., Tunga, A., Xu, X., Lin, Y., Zhao, Z., Ryu, H., Tsai, C.C., Taniguchi, T., Watanabe, K. and Rakheja, S., (2025). Non-Volatile Reconfigurable Four-Mode van der Waals Transistors and Transformable Logic Circuits. ACS nano, 19(13), pp.12948-12959.
• Chung, S.T., Langpoklakpam, C., Dong, Y., Hsiao, Y.K., Rakheja, S., Kuo, H.C., Wuu, D.S., Järrendahl, K., Hsiao, C.L., Dobrocka, E. and Tapajna, M., (2025). Effect of the AlGaO Spacer Layer on the Performance of ß-Gallium Oxide Metal–Oxide Semiconductor Field Effect Transistors. Advanced Electronic Materials, p.e00291.
• Dong, Y., Yagyu, E., Matsuda, T., Teo, K. H., Lin, C., & Rakheja, S. (2025). An Accurate Electrical and Thermal Co-Simulation Framework for Modeling High-Temperature DC and Pulsed IV Characteristics of GaN HEMTs. IEEE Journal of the Electron Devices Society.
• Shukla, A., Qian, S., & Rakheja, S. (2025). Spintronic devices and applications using noncollinear chiral antiferromagnets. Nanoscale Horizons, vol. 10, no. 3, pp. 484-511.
• Cruz-Camacho, Elkin, Siyuan Qian, Ankit Shukla, Neil McGlohon, Shaloo Rakheja, and Christopher Carothers. Performance evaluation of spintronic-based spiking neural networks using parallel discrete-event simulation. ACM Transactions on Modeling and Computer Simulation 35, no. 1 (2024): 1-30.
• Chan, C.Y., Menzel, J.P., Dong, Y., Long, Z., Waseem, A., Wu, X., Xiao, Y., Xie, J., Chow, E.K., Rakheja, S. and Batista, V.S. Demystifying metal-assisted chemical etching of GaN and related heterojunctions. Applied Physics Reviews, 11(2), 2024.
• Rehm L., Morshed Md G., Misra S., Shukla A., Rakheja S., Pinarbasi M., Ghosh A., Kent A.D. Temperature-resilient random number generation with stochastic actuated magnetic tunnel junction devices. Applied Physics Letters, vol. 124, no. 5, 052401, 2024.
• Zhao Z., Kang J., Rakheja S., Zhu W., Control-gate-free reconfigurable transistor based on 2D MoTe2 with asymmetric gating. Applied Physics Letters, vol. 124, no. 7, 073506, 2024
• Zhao Z., Kang J., Tunga A., Ryu H., Shukla A., Rakheja S., Zhu W. 2024. Content-Addressable Memories and Transformable Logic Circuits Based on Ferroelectric Reconfigurable Transistors for In-Memory Computing, vol. 18, no. 4, 2763-2771, ACS Nano, 2024.
• Ryu H., Kang J., Park M., Bae B., Zhao Z., Rakheja S., Lee K., Zhu W. 2023. ACS Applied Materials & Interfaces, vol. 15, no. 46, 53671-53677, 2023.
• Shukla S., Qian S., Rakheja S. 2024. Impact of strain on the SOT-driven dynamics of thin film Mn3Sn. Journal of Applied Physics (accepted).
• Shukla, S., Qian S., Rakheja S. 2023. Order parameter dynamics in Mn3Sn driven by DC and pulsed spin?orbit torques. APL Materials, vol. 11, no. 9, 091110, 2023.
• Qian S., Rakheja S. 2023. Modeling and Evaluation of Echo-State Networks using Spin Torque Nano-oscillators. IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, vol. 9, no. 2, pp. 134-142, Dec. 2023, doi: 10.1109/JXCDC.2023.3317240
• Rakheja, S., Chen Z., Chen C.T. 2023. Guest Editorial: Dimensional Scaling of Material Functional Properties to Meet Back-End-of-Line (BEOL) Challenges. Applied Physics Letters, 123, 030401, 2023. https://doi.org/10.1063/5.0165095
• Dong Y., Dowling K., Ghandiparsi S., Voss L., Rakheja S. 2023. Observation and Modeling of Near-Bistable Dark-Mode Current-Voltage Characteristics in Semi-Insulating Gallium Arsenide With Implications for Photoconductors. IEEE Journal of the Electron Devices Society, vol. 11, pp. 385-398, 2023, doi: 10.1109/JEDS.2023.3291312.
• Tunga A.; Zijing Z.; Shukla A.; Zhu W.; and Rakheja S. 2023. Physics-Based Modeling and Validation of 2D Schottky Barrier Field-Effect Transistors. IEEE Transactions on Electron Devices, 70, 4, 2034-2041 (2023).
• Kang J., Rakheja S., and Zhu W. 2023. Reconfigurable transistors based on van der Waals heterostructures. MRS Advances, 2023.
• Tunga A., Li K., White E, Miller N.C., Grupen M., Albrecht J., and Rakheja S. 2022. A comparison of a commercial hydrodynamics TCAD solver and Fermi kinetics transport convergence for GaN HEMTs. Journal of Applied Physics 132, 225702 (2022). Editor's Pick. https://csl.illinois.edu/news/52728
• Dong Y., Dowling K.M., Hau-Riege S., Conway A., Voss L., and Rakheja S. 2022. Design Considerations for Gallium Arsenide Pulse Compression Photoconductive Switch. Journal of Applied Physics, 131, 134504 (2022).
• Shukla, A. & Rakheja, S. (2022). Spin-Torque-driven Terahertz Auto Oscillations in Non-Collinear Coplanar Antiferromagnets, Physical Review Applied, 17, 034037.
• Rangarajan, N., Patnaik, S., Knechtel, J., Karri, R., Sinanoglu, O., & Rakheja, S. (2022). Opening the Doors to Dynamic Camouflaging: Harnessing the Power of Polymorphic Devices. IEEE Transactions on Emerging Topics in Computing, 10(1), 137-156. Article is featured at https:// techxplore.com/news/2018-11-dynamic-camouflaging-approach-intellectual-property. html
• Dowling K.M., Dong Y., Hall D., Mukherjee, S., Schneider J.D., Hau-Riege S., Harrison S.E., Leos L., Conway A., Rakheja S., & Voss L. (2021). Pulse Compression Photoconductive Switching Using Negative Differential Mobility. IEEE Transactions on Electron Devices, vol. 69, no. 2, 590-596 (2021).
• Mukherjee S., Dowling K.M., Dong Y., Li K., Conway A., Rakheja S., & Voss L. (2021). A Prony-based curve-fitting method for characterization of RF pulses from optoelectronic devices. IEEE Signal Processing Letters.
• Zhao, Z., Rakheja, S., & Zhu, W. (2021). Nonvolatile Reconfigurable 2D Schottky Barrier Transistors. Nano letters, 21(21), 9318-9324.
• Teo, K.H., Zhang Y., Chowdhury N., Rakheja S., Ma R., Xie Q., Yagyu E., Yamanaka K., Li K., & Palacios T. (2021). Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects. Journal of Applied Physics 130 (16), 160902. (Invited; first five co-authors contributed equally)
• Farzaneh, S. & Rakheja S. (2021). Spin splitting and spin Hall conductivity in buckled monolayers of group 14: First-principles calculations. Physical Review B 104 (11), 115205.
• Rakheja, S., Li, K., Dowling, K. M., Conway, A. M., & Voss, L. F. (2021). Design and Simulation of Near-Terahertz GaN Photoconductive Switches?Operation in the Negative Differential Mobility Regime and Pulse Compression. IEEE Journal of the Electron Devices Society, 9, 521-532.
• Mahmood, A., Echtenkamp, W., Street, M., Wang, J.L., Cao, S., Komesu, T., Dowben, P.A., Buragohain, P., Lu, H., Gruverman, A., Parthasarathy, A., Rakheja S., & Binek C. (2021). Voltage controlled Neel vector rotation in zero magnetic field. Nature communications, 12(1), pp.1-8.
• Parthasarathy, A., Cogulu, E., Kent, A. D., & Rakheja, S. (2021). Precessional spin-torque dynamics in biaxial antiferromagnets. Physical Review B, 103(2), 024450.
• Farzaneh, S. M., & Rakheja, S. (2020). Intrinsic spin Hall effect in topological insulators: A first-principles study. Physical Review Materials, 4(11), 114202.
• Rakheja, S., Huang, L., Hau-Riege, S., Harrison, S. E., Voss, L. F., & Conway, A. M. (2020). Performance Modeling of Silicon Carbide Photoconductive Switches for High-Power and High-Frequency Applications. IEEE Journal of the Electron Devices Society.
• Rakheja, S., Sengupta, P., & Shakiah, S. M. (2020). Design and Circuit Modeling of Graphene Plasmonic Nanoantennas. IEEE Access, 8, 129562-129575.
• Shukla, A., Parthasarathy, A., & Rakheja, S. (2020). Switching time of spin-torque-driven magnetization in biaxial ferromagnets. Physical Review Applied, 13(5), 054020.
• Rangarajan, N., Patnaik, S., Knechtel, J., Sinanoglu, O., & Rakheja, S. (2020). SMART: A Secure Magnetoelectric AntifeRromagnet-Based Tamper-Proof Non-Volatile Memory. IEEE Access, 8, 76130-76142.
• Sengupta, P., & Rakheja, S. (2020). Spin-valley coupled thermoelectric energy converter with strained honeycomb lattices. Physica E: Low-dimensional Systems and Nanostructures, 118, 113862.
• Farzaneh, S. M., and Shaloo Rakheja. Extrinsic spin-orbit coupling and spin relaxation in phosphorene. Physical Review B 100.24 (2019): 245429.
• Yarmoghaddam, E., Haratipour, N., Koester, S. J., & Rakheja, S. (2019). A Physics-Based Compact Model for Ultrathin Black Phosphorus FETs-Part I: Effect of Contacts, Temperature, Ambipolarity, and Traps. IEEE Transactions on Electron Devices, 67(1), 389-396.
• Yarmoghaddam, E., Haratipour, N., Koester, S. J., & Rakheja, S. (2019). A Physics-Based Compact Model for Ultrathin Black Phosphorus FETs-Part II: Model Validation Against Numerical and Experimental Data. IEEE Transactions on Electron Devices, 67(1), 397-405.
• Li, K., & Rakheja, S. (2019). Modeling and Simulation of Quasi-Ballistic III-Nitride Transistors for RF and Digital Applications. International Journal of High Speed Electronics and Systems, 28(01n02), 1940011.
• Patnaik, S., Rangarajan, N., Knechtel, J., Sinanoglu, O., & Rakheja, S. (2019). Spin-orbit torque devices for hardware security: From deterministic to probabilistic regime. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol. 39, no. 8, pp. 1591-1606, 2020.
• Rakheja, S., Flatte, M. E., & Kent, A. D. (2019). Voltage-Controlled Topological Spin Switch for Ultralow-Energy Computing: Performance Modeling and Benchmarking. Physical Review Applied, 11(5), 054009.
• Yarmoghaddam, E., Haratipour, N., Koester, S. J., & Rakheja, S. (2019). A virtual-source emission-diffusion IV model for ultra-thin black phosphorus field-effect transistors. Journal of Applied Physics, 125(16), 165706.
• Li, K., & Rakheja, S. (2019). A unified static-dynamic analytic model for ultra-scaled III-nitride high electron mobility transistors. Journal of Applied Physics, 125(13), 134503.
• Parthasarathy, A., & Rakheja, S. (2019). Dynamics of magnetoelectric reversal of an antiferromagnetic domain. Physical Review Applied, 11(3), 034051.
• Rangarajan, N., Patnaik, S., Knechtel, J., Sinanoglu, S., & Rakheja, S. (2019). Spin-based reconfigurable logic for power-and area-efficient applications. IEEE Design & Test, 36(3), 22-30.
• Li, K., & Rakheja, S. (2018). Analytic modeling of nonlinear current conduction in access regions of III-nitride HEMTs. MRS Advances, 3(3), 131-136.
• Farzaneh, SM & Rakheja, S. (2018). Spin relaxation due to the D'yakonov-Perel' mechanism in 2D semiconductors with an elliptic band structure. arXiv preprint arXiv:1806.09488.
• Parthasarathy, A., & Rakheja, S. (2018). Reversal time of jump-noise dynamics for large nucleation. IEEE Transactions on Magnetics, 55(2), 1-3.
• Li, K., & Rakheja, S. (2018). An analytic current-voltage model for quasi-ballistic III-nitride high electron mobility transistors. Journal of Applied Physics, 123(18), 184501.
• Parthasarathy, A., & Rakheja, S. (2018). Reversal time of jump-noise magnetization dynamics in nanomagnets via Monte Carlo simulations. Journal of Applied Physics, 123(22), 223901. (Appeared as the cover article of the journal).
• Rakheja, S. (2018). Terahertz band communication using plasma wave propagation in multilayer graphene heterostructures. IET Cyber-Physical Systems: Theory & Applications, 3(2), 89-98.
• Kani, N., Rakheja, S., & Naeemi, A. (2018). Analytic modeling of dipolar field requirements for robust coupling in a non-identical biaxial two-magnet system. Journal of Applied Physics, 124(2), 023901. (Appeared as the cover article of the journal).
• Kani, N., Naeemi, A., & Rakheja, S. (2017). Non-monotonic probability of thermal reversal in thin-film biaxial nanomagnets with small energy barriers. AIP Advances, 7(5), 056006.
• Rakheja, S., & Kani, N. (2017). Spin pumping driven auto-oscillator for phase-encoded logic--device design and material requirements. AIP Advances, 7(5), 055905.
• Rangarajan, N., Parthasarathy, A., & Rakheja, S. (2017). A spin-based true random number generator exploiting the stochastic precessional switching of nanomagnets. Journal of applied physics, 121(22), 223905.
• Sengupta, P., & Rakheja, S. (2017). Anisotropy-driven quantum capacitance in multi-layered black phosphorus. Applied Physics Letters, 111(16), 161902.
• Farzaneh, S. M., & Rakheja, S. (2017). Voltage tunable plasmon propagation in dual gated bilayer graphene. Journal of Applied Physics, 122(15), 153101.
• Yarmoghaddam, E., & Rakheja, S. (2017). Dispersion characteristics of THz surface plasmons in nonlinear graphene-based parallel-plate waveguide with Kerr-type core dielectric. Journal of Applied Physics, 122(8), 083101.
• Rangarajan, N., Parthasarathy, A., Kani, N., & Rakheja, S. (2017). Energy-efficient computing with probabilistic magnetic bits--Performance modeling and comparison against probabilistic CMOS logic. IEEE Transactions on Magnetics, 53(11), 1-10.
• Petrov, V., Moltchanov, D., Komar, M., Antonov, A., Kustarev, P., Rakheja, S., & Koucheryavy, Y. (2017). Terahertz band intra-chip communications: Can wireless links scale modern x86 cpus?. IEEE Access, 5, 6095-6109.
• Rakheja, S. (2016). On the Gaussian pulse propagation through multilayer graphene plasmonic waveguides—Impact of electrostatic screening and frequency dispersion on group velocity and pulse distortion. IEEE Transactions on Nanotechnology, 15(6), 936-946.
• Kani, N., Rakheja, S., & Naeemi, A. (2016). A probability-density function approach to capture the stochastic dynamics of the nanomagnet and impact on circuit performance. IEEE Transactions on Electron Devices, 63(10), 4119-4126.
• Rakheja, S., & Sengupta, P. (2016). The tuning of light-matter coupling and dichroism in graphene for enhanced absorption: Implications for graphene-based optical absorption devices. Journal of Physics D: Applied Physics, 49(11), 115106.
• Rakheja, S., & Sengupta, P. (2015). Gate-Voltage Tunability of Plasmons in Single-Layer Graphene Structures: Analytical Description, Impact of Interface States, and Concepts for Terahertz Devices. IEEE Transactions on Nanotechnology, 15(1), 113-121.
• Rakheja, S., Lundstrom, M. S., & Antoniadis, D. A. (2015). An improved virtual-source-based transport model for quasi-ballistic transistors--Part II: Experimental Verification. IEEE Transactions on Electron Devices, 62(9), 2794-2801.
• Rakheja, S., Lundstrom, M. S., & Antoniadis, D. A. (2015). An improved virtual-source-based transport model for quasi-ballistic transistors--Part I: Capturing effects of carrier degeneracy, drain-bias dependence of gate capacitance, and nonlinear channel-access resistance. IEEE Transactions on Electron Devices, 62(9), 2786-2793.
• Rakheja, S., Wu, Y., Wang, H., Palacios, T., Avouris, P., & Antoniadis, D. A. (2014). An ambipolar virtual-source-based charge-current compact model for nanoscale graphene transistors. IEEE Transactions on Nanotechnology, 13(5), 1005-1013.
• Bonhomme, P., Manipatruni, S., Iraei, R. M., Rakheja, S., Chang, S. C., Nikonov, D. E., ... & Naeemi, A. (2014). Circuit simulation of magnetization dynamics and spin transport. IEEE Transactions on Electron Devices, 61(5), 1553-1560.
• Rakheja, S., Chang, S. C., & Naeemi, A. (2013). Impact of dimensional scaling and size effects on spin transport in copper and aluminum interconnects. IEEE transactions on electron devices, 60(11), 3913-3919.
• Rakheja, S., & Naeemi, A. (2013). Roles of doping, temperature, and electric field on spin transport through semiconducting channels in spin valves. IEEE transactions on nanotechnology, 12(5), 796-805.
• Rakheja, S., Kumar, V., & Naeemi, A. (2013). Evaluation of the potential performance of graphene nanoribbons as on-chip interconnects. Proceedings of the IEEE, 101(7), 1740-1765.
• Kumar, V., Rakheja, S., & Naeemi, A. (2012). Performance and energy-per-bit modeling of multilayer graphene nanoribbon conductors. IEEE transactions on electron devices, 59(10), 2753-2761.
• Rakheja, S., & Naeemi, A. (2011). Graphene nanoribbon spin interconnects for nonlocal spin-torque circuits: Comparison of performance and energy per bit with CMOS interconnects. IEEE transactions on electron devices, 59(1), 51-59.
• Rakheja, S., & Naeemi, A. (2011). Modeling interconnects for post-CMOS devices and comparison with copper interconnects. IEEE Transactions on Electron Devices, 58(5), 1319-1328.
• Rakheja, S., & Naeemi, A. (2010). Interconnects for novel state variables: Performance modeling and device and circuit implications. IEEE Transactions on Electron Devices, 57(10), 2711-2718.
• Kar, S., Rawat, S., Rakheja, S., & Reddy, D. (2005). Characterization of accumulation layer capacitance for extracting data on high-kappa gate dielectrics. IEEE Transactions on Electron Devices, 52(6), 1187-1193.

Articles in Conference Proceedings

• Sheikh Mohd Ta-Seen Afrid, He Lin Zhao, Arend M. van der Zande, and Shaloo Rakheja. 2026. Strain-Driven Control of Carrier Injection at Pristine and Defective n- and p-Type Metal–TMD Interfaces. In VLSI International Symposium on Technology, Systems, and Applications. (April 13-17).  
• Samdani, G.M., Shukla A. and Rakheja S., 2025, June. A custom end-to-end modeling suite for ferroelectric devices. In Device Research Conference (June 22-25), DRC. 
• Voss, L., Shao, Q., Frye, C.D., Evans, D., Chatterjee, B., White, E., Soumak, N., Rakheja, S., Malakoutian, M., Chowdhury, S. and Giardine, F., 2025, October. Diamond Optically Gated Junction Field Effect Transistors. In 248th ECS Meeting (October 12-16, 2025). ECS.
• Samdani, G.M., Shukla, A. and Rakheja, S., 2025, July. Switching Dynamics of Multidomain Ferroelectric Devices: Physical Modeling Approaches, Experimental Validation, and Design-Space Exploration. In 2025 IEEE 25th International Conference on Nanotechnology (NANO) (pp. 217-221). IEEE.
• Tunga, S., Grupen, M. and Rakheja, S., 2025. A full 3D TCAD framework for nanosheet transistors including quantum-confined channels.
• Rakheja, S., 2024, October. A materials-and devices-centric approach to neuromorphic computing. In Proceedings of the 43rd IEEE/ACM International Conference on Computer-Aided Design (pp. 1-9).
• Tunga A., Kang J., Zhao Z., Shukla A., Zhu W., Rakheja S. 2024. Modeling of content addressable memory using reconfigurable transistors. In Device Research Conference, June 23-26, College Park, MD, USA.
• Tunga A., Shur M., Grupen M., Hill D., Rakheja, S. 2024. Simulating Terahertz Plasma Oscillations in Transistors. In International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep. 25-27, San Jose, CA.
• Zhou, Y., Ma, H., Yu, J., Shameem, T., Salehi, Z., Rakheja, S., Li, E. and Schutt-Aine, J.E., 2024, May. Latency Insertion Method for Accelerated Simulation of Memristor Crossbar Array in Neuromorphic Chip. In 2024 IEEE 74th Electronic Components and Technology Conference (ECTC) (pp. 2200-2204). IEEE.
• Qian S., Shukla A., Rakheja S. Effect of thermal noise on the field-assisted spin-orbit-torque-driven dynamics in Mn3Sn. Bulletin of the American Physical Society, Minneapolis, Minnesota, March 3-8, 2024.
• Pulugurtha S., Daniel K., Rakheja S. Spin Relaxation in Strained Graphene-TMD Heterostructures using Ab Initio Methods. Bulletin of the American Physical Society, Minneapolis, Minnesota, March 3-8, 2024. (Best in session)
• Shukla S., Qian S., Rakheja S. Field-assisted spin-orbit-torque-driven dynamics in monodomain Mn3Sn with perpendicular magnetic anisotropy. IEEE and APS 68th Annual Conference on Magnetism and Magnetic Materials, Dallas, TX, Oct. 30-Nov. 03, 2023.
• White E., Tunga A., Miller N.C., Grupen M., Albrecht J., Rakheja S. Large-signal modeling of GaN HEMTs using Fermi kinetics and commercial hydrodynamics transport. In Device Research Conference (DRC), Santa-Barbara, CA, June 25-28, 2023
• Shukla A., Zhu W., and Rakheja S. All-ferroelectric implementation of Ising machines. In Semiconductor Research Corporation (SRC), Techcon, Austin, Texas, September 10-12, 2023
• Tunga, A., Zhu W.; and Rakheja S. Effects of Process Variability on Performance of Reconfigurable Transistors based Content Addressable Memory. In Semiconductor Research Corporation (SRC), Techcon, Austin, Texas, September 10-12, 2023.
• Shukla, A., Heller, L., Morshed, M. G., Rehm, L., Ghosh, A. W., Kent, A. D., and Rakheja, S. (2023, April). A True Random Number Generator for Probabilistic Computing using Stochastic Magnetic Actuated Random Transducer Devices. In 2023 24th International Symposium on Quality Electronic Design (ISQED) (pp. 1-10). IEEE
• M.G. Morshed, A. Shukla, L. Rehm, L. Heller, Y. Xie, S. Ganguly, S. Rakheja, A.D. Kent, and A. Ghosh. Probabilistic spin-torque switching of perpendicular magnetic tunnel junctions under short current pulses. Bulletin of the American Physical Society, Las Vegas, NV, March 5-10, 2023.
• J. Kang, S. Rakheja, and W. Zhu. Reconfigurable logic transistors based on 2D heterostructures. Bulletin of the American Physical Society, Las Vegas, NV, March 5-10, 2023.
• Y. Dong and S. Rakheja. Role of deep levels in semi-insulating gallium arsenide pulse-compression photoconductive switches. Bulletin of the American Physical Society, Las Vegas, NV, March 5-10, 2023.
• J. Kang, S. Rakheja, and W. Zhu. Reconfigurable Transistors based on Van der Waals Heterostructures. In Semiconductor Research Corporation (SRC) Techcon, Austin, Texas, September 18-20, 2022.
• Z. Zhao, K. Xu, J. Liu, W. Jiang, H. Ryu, S. Rakheja, T. Low, and W. Zhu. Nanoscale devices based on two-dimensional and ferroelectric materials. In Device Research Conference (DRC), Columbus, Ohio, June 26-29, 2022.
• E. Cruz-Camachu, S. Qian, A. Shukla, N. McGlohon, S. Rakheja, and C. Carothers. Evaluating performance of spintronics-based spiking neural network chips using parallel discrete event simulation. In SIGSIM Conference on Principles of Advanced Discrete Simulation, Atlanta, GA, June 08-10, 2022.
• B. Wu, S. Rakheja. Modeling of the charge-voltage characteristics of AlScN/AlN/GaN heterostructures. In Device Research Conference (DRC), Columbus, Ohio, June 26-29, 2022.
• K. Li, T. Matsuda, E. Yagyu, K.H. Teo, S. Rakheja. Trapping phenomena in GaN HEMTs with Fe- and C-doped buffer. In Device Research Conference (DRC), Columbus, Ohio, June 26-29, 2022.
• K. Li., S. Rakheja. Physical Modeling of Quasi-ballistic GaN HEMTs Operating at Cryogenic Temperatures. In Compound Semiconductor Week (CSW), Michigan, Ann Arbor, June 1-3, 2022.
• A. Shukla, S. Qian, S. Rakheja. Dipolarly coupled nanomagnets as hardware emulators of neurons for brain-like computing systems. In Bulletin of the American Physical Society, Chicago, Mar. 14-18, 2022.
• S. Shah, A. Mahmood, W. Echtenkamp, J. Wang, M. Street, T. Komesu, P. Dowben, P. Buragohain, H. Lu, A. Gruverman, A. Parthasarathy, S. Rakheja, C. Binek. Voltage-controlled Neel vector rotation in zero magnetic field in high-TN magnetoelectric thin films. In Bulletin of the American Physical Society, Chicago, Mar. 14-18, 2022.
• A. Tunga, X. Li, S. Rakheja. Modeling-based design and benchmarking of Al-rich AlGaN 3D nanosheet MOSFET and MOSHEMTs for RF Applications. In 79th Device Research Conference (DRC), Virtual, June 20-23, 2021.
• A. Shukla, S. Rakheja. Terahertz auto oscillations in non-collinear coplanar metallic antiferromagnets. In 79th Device Research Conference (DRC), Virtual, June 20-23, 2021.
• A. Shukla, S. Rakheja. Spin torque driven self- oscillations in non-collinear coplanar antiferromagnets. In American Physical Society (APS) March Meting, Mar. 15-19, 2021 (Virtual).
• A. Parthasarathy, S. Rakheja. Spin-Torque-Induced Chaos in Antiferromagnets. In Magnetism and Magnetic Materials Conference, Virtual, Nov. 02-06, 2020.
• K. Li, E. Yagyu, H. Saito, K. H. Teo, S. Rakheja. Compact modeling of gate leakage phenomenon in GaN HEMTs. In International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Virtual, Sep. 23-Oct. 06, 2020.
• A. Parthasarathy, S. Rakheja. Ultrafast and Energy-efficient Antiferromagnetic Memory and Oscillator. In SRC Techcon, Austin, Texas, Sep. 14-17, 2020.
• A. Shukla, A. Parthasarathy, S. Rakheja. Analytic modeling of switching time dynamics of monodomain ferromagnets with biaxial energy landscape. Bulletin of the American Physical Society, 65, Mar. 5, 2020.
• A. Parthasarathy, N. Rangarajan, S. Rakheja. Strain-driven spin-Hall antiferromagnetic memory for 180° switching. Bulletin of the American Physical Society, 65, Mar. 5, 2020
• S.M. Farzaneh, S. Rakheja. Effective Hamiltonian for Extrinsic Spin-Orbit Coupling in 2D Materials. Bulletin of the American Physical Society, 65, Mar. 5, 2020.
• S. Rakheja, L. Huang, S. Hau-Riege, S.E. Harrison, L.F. Voss, A.M. Conway. Modeling and Design of SiC-based High-Frequency Photoconductive Switches. In IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Penang, Malaysia, 2020, pp. 1-4, doi: 10.1109/EDTM47692.2020.9117837.
• A. Parthasarathy, S. Rakheja. Theory of spin-current-induced auto-oscillations in a biaxial antiferromagnet. In Magnetism and Magnetic Materials Conference, Las Vegas, NV, Nov. 04-08, 2019.
• P. Sengupta, S. Rakheja. Spin-valley Coupled Caloritronics with Strained Honeycomb Lattices. In 2019 Device Research Conference (DRC), Ann Arbor, MI, USA, 2019, pp. 81-82, doi: 10.1109/DRC46940.2019.9046413.
• S. Rakheja, M. Flatte, A. D. Kent. Voltage-controlled topological spin-switch for approximate computing. Joint MMM-Intermag Conference, Washington D.C., Jan. 14-18, 2019.
• K. Li, S. Rakheja. A unified charge-current compact model of gallium nitride transistors for RF and digital applications. IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Singapore, Mar. 12-15, 2019. (Invited)
• A. Parthasarathy, S. Rakheja. Phenomenology of magnetoelectric switching of antiferromagnetic domain. Joint MMM-Intermag Conference, Washington D.C., Jan. 14-18, 2019.
• K. Li, S. Rakheja. Design and modeling of III-Nitride HEMTs for extremely linear RF operation. Materials Research Society (MRS) Meeting, Boston, Massachusetts, Nov. 25-30, 2018.
• S. Farzaneh, S. Rakheja. Spin relaxation in 2D semiconductors with an elliptic band structure. Materials Research Society (MRS) Meeting, Boston, Massachusetts, Nov. 25-30, 2018.
• S. Patnaik, N. Rangarajan, J. Knechtel, O. Sinanoglu, S. Rakheja. Advancing hardware security using polymorphic and stochastic spin-Hall effect devices. Design Automation and Test in Europe (DATE), Dresden, Germany, Mar. 19-23, 2018.
• K. Li, S. Rakheja. Nonlinearity of III-nitride HEMTs for RF applications--Analytical modeling and device design for enhanced dynamic range. Materials Research Society (MRS) Meeting, Boston, Massachusetts, Nov. 26-Dec. 01, 2017.
• S. Rakheja, N. Kani. Spin-torque nano-oscillator driven by spin pumping for phase- based neuromorphic computing. Materials Research Society (MRS) Meeting, Boston, Massachusetts, Nov. 26-Dec. 01, 2017.
• S. Rakheja, K. Li. Graphene-based plasma wave interconnects for on-chip communication in the terahertz band. Berkeley Symposium on Energy Efficient Electronic Systems & Steep Transistors Workshop, Berkeley, California, Oct. 19-20, 2017.
• N. Kani, S. Rakheja. Analytical reliability models for two-magnet systems. MAGNET, The 5th Italian Conference on Magnetism, Assisi, Italy, Sep. 13-15, 2017.
• S. Rakheja, N. Kani. Polymorphic spintronic logic gates for hardware security primitives-Device design and performance benchmarking. Nano Architectures (NANOARCH), Newport, Rhode Island, July 25-26, 2017.
• S. Rakheja, P. Sengupta. Graphene nanoribbon plasmonic waveguides: Fundamental lim- its and device implications. Device Research Conference (DRC), Santa Barbara, California, June 22-25, 2014.
• A. Naeemi, A. Ceyhan, V. Kumar, C. Pan, R. Mousavi, S. Rakheja. BEOL scaling limits and next generation technology prospects. Design Automation Conference (DAC), San Francisco, California, June 02-06, 2014 (Invited).
• S. Rakheja, H. Wang, T. Palacios, I. Meric, K. Shepard, D. Antoniadis. A unified charge- current compact model for ambipolar operation in quasi-ballistic graphene transistors: Experimental verification and circuit-analysis demonstration. IEEE Electron Devices Meeting (IEDM), Washington D.C., Dec. 09-12, 2013
• S. Rakheja, V. Kumar, A. Naeemi. Graphene nanoribbons for all-spin logic: Effects of dimensional scaling on spin transport. Semiconductor Research Corporation (SRC), TECHCON, Austin, Texas, Sep. 10-12, 2012 (Won the best in session award).
• S. Rakheja, A. Naeemi. Compact modeling of spin-transport parameters in semiconducting channels in non-local spin-torque devices. IEEE NANO, Birmingham, U.K., Aug. 20 ? 23, 2012.
• S. Rakheja, V. Kumar, Comparison of electrical, optical and plasmonic on-chip interconnects based on delay and energy considerations. IEEE International Symposium on Quality Electronic Design (ISQED), Santa Clara, California. March 18 ? 22, 2012.
• S. Rakheja, A. Naeemi. Interconnect analysis in spin-torque devices: Performance modeling, optimal repeater insertion, and circuit-size limits. IEEE International Symposium on Quality Electronic Design (ISQED), Santa Clara, California. March 18 ? 22, 2012.

Pending Articles

• Soumak Nandi, Qinghui Shao, Clint D. Frye, Mohamadali Malakoutian, Bikramjit Chatterjee, Dylan M. Evans, oroush Ghandiparsi, Francesca Giardine, Robert C.N. Pilawa-Podgurski, Srabanti Chowdhury, Lars Voss, Shaloo Rakheja. 2025. Physical modeling and design of a non-volatile optically gated high-power diamond transistor. IEEE Transactions on Electron Devices.
• Soumak Nandi, Qinghui Shao, Clint D. Frye, Mohamadali Malakoutian, Bikramjit Chatterjee, Dylan M. Evans, Srabanti Chowdhury, Lars Voss, Shaloo Rakheja. 2025. A High Power Optoelectronic Diamond FinFET. IEEE Electron Devices Letters.
• Morshed Md G., Rehm L., Shukla A., Xie Y., Ganguly S., Rakheja S., Kent A.D., Ghosh A. 2024. Reduced sensitivity to process, voltage and temperature variations in activated perpendicular magnetic tunnel junctions based stochastic devices. Applied Physics Letters.
• Sengupta P. and Rakheja S. 2022. Anomalous photo-thermal effects in multi-layered semi-Dirac black phosphorus. Submitted to Physical Review Materials. arXiv preprint arXiv:2007.06901.

Other Publications

• 5G Enabled Energy Innovation: Advanced Wireless Networks for Science, Workshop Report

Patents

• Pulse Compression Photoconductive Semiconductor Switches filed jointly with Lawrence Livermore National Laboratory on October 15, 2021 (U.S. Patent Application No. 17/502,681)
• High electron mobility transistor (HEMT) comprising stacked nanowire or nanosheet heterostructures filed on April 06, 2021 (U.S. Patent Application No. 63/171,443)

Research Honors

• State Medal (2000)
• Sangeeta Goel Memorial Award (2001)
• Academic Excellence Award (2002-2003)
• Intel PhD Fellowship (2011-2012)
• Graduate Research Excellence Award (2012)
• Best in Session Award Semiconductor Research Corporation (SRC), TECHCON, 2012 (2012)
• NYU Goddard Junior Faculty Fellowship (2018-2019)
• Intel Alumni Endowed Faculty Fellow (2023)
• Public Voices Fellow (2023-2024)
• Engineering Council Outstanding Advisor Award (2024) (2024)
• Selected by the US National Science Foundation and the Ireland Science Foundation to participate in a workshop to "Foster Trans-Atlantic Inter-disciplinary Collaborations" in Semiconductors & Microelectronics (2024)

Public Service Honors

• IEEE Electron Devices Society (EDS) golden reviewer (2014-2017)

For More Information

• Center for Advanced Semiconductor Chips with Accelerated Performance (ASAP)
• G-Scholar Page
• Research Gate Profile
• Illinois Semiconductor Workforce Network (ISWN)