Shaloo Rakheja

Research Interests

• Compact Device Modeling (Wide bandgap devices, magnetic/ferroelectric devices)
• Technology-Device-Circuit Co-Design for High-Frequency and High-Power Applications and Neuromorphic Computing

Research Statement

My research in theoretical device physics lies at the intersection of materials science and circuit design. I am engaged in understanding, predicting, and modeling physical phenomena in materials that drive their functional behavior and enable multifaceted applications in the domains of low-power logic and memory, brain-inspired and secure computing, and wireless communication. The device models I create are predictive in nature, provide guidance to experiments, reduce costs of test-structures, improve the turnaround and success rate of laboratory tests by preventing trial and error, and enable correct interpretation of experimental data. Because my models are multi-scale in nature, spanning from first-principles calculations to circuit-compatible implementations, my research has advanced our capability for materials-to-circuits co-design for a wide range of technologically relevant applications. This means that my computational platforms empower device technologists and circuit designers to rapidly exchange scientific ideas and strengthen the innovation loop across the design hierarchy.

Over my academic career, I have conducted foundational research in materials and devices that not only push the envelope of basic science but also have the potential to create pervasive and impactful electronic applications. For example, my work in wide bandgap semiconductors can lead to superior near-terahertz communication and sensing systems designed to access data from extreme environments. Such systems can enable major breakthroughs for several scientific investigations including energy generation, national security, and space applications. Meanwhile, I have expanded my research into power electronics applications of ultrawide bandgap semiconductors, prominently diamond and gallium oxide, which have the potential to reduce electricity losses in high-voltage transmission by more than 40% and dramatically improve the efficiency of AI data centers. My work in modeling and designing non-volatile and highly energy-efficient spintronic and ferroelectric devices can address one of the grand societal challenges related to reducing the power consumption of computing systems.

In the area of digital and high-frequency electronics, I have developed models to describe the behavior of III-nitride high-electron mobility transistors (HEMTs), photoconductive switches using wide bandgap semiconductors, Schottky-barrier transistors, graphene plasmonic interconnects, and nano-antennas that can operate in the terahertz regime. My research is the first to report a III-nitride HEMT compact model that faithfully captures the physics of quasi-ballistic electron transport�i.e., when electron scatterings are suppressed in the channel. I have also highlighted the limits, challenges, and opportunities of scaling III-nitride HEMTs down to the cryogenic temperatures, approximately 4 K, needed for interfacing of electronic circuitry with the quantum computer circuitry. My group was the first to develop a physical model interface for commercial TCAD solvers that allows accurate simulation of sub-gap excitation in diamond dual-gated (i.e., both electrically and optically) field-effect transistor, which offers complete electromagnetic interference immunity, intrinsic galvanic isolation, and compact design by eliminating bulky isolation.

I have also contributed significantly to the fundamental understanding of noisy dynamics in magnetic structures and applications of magnetic materials to nonvolatile memory, probabilistic computing, and reconfigurable circuits that are inherently secure against hardware attacks. More recently, I was invited to present at IEEE NANO, where I shared my work on multidomain switching dynamics in hafnium oxide�a material rapidly emerging as a leading candidate for non-volatile memory devices that can be seamlessly integrated with silicon CMOS to enable enhanced functionality. To tackle the multi-scale and multi-physics problems for various nanoscale devices, I have developed new numerical techniques employing GPUs that allow the massive parallelization of Monte-Carlo and various other optimization algorithms for specific applications.

I currently serve as Director of the Center for Advanced Semiconductor Chips with Accelerated Performance (ASAP), an NSF Industry-University Cooperative Research Center that drives pathfinding semiconductor research through sustained engagement with industry. ASAP Center partners with major semiconductor companies, startups, and national labs to develop strategies for reducing the energy consumption of computing systems. The ASAP Center has opened doors to new inter-disciplinary collaborations amongst more than 15 faculty and 30 students who are working together to develop new information processing solutions with orders of magnitude improvement in system performance. Industry members include AFRL, AMD, IBM, Intel, Laboratory of Physical Sciences, MIT Lincoln Lab, Raytheon/Collins, Sandia National Lab, Seagate, Synopsys, TSMC.

Since early 2025, I have also led a statewide, CHIPS+ Act-funded initiative�the Illinois Semiconductor Workforce Network (ISWN)�to prepare the next generation of semiconductor professionals. ISWN delivers hands-on fabrication training to students at community colleges in Illinois, equipping them with the skills needed to thrive in this critical industry. By bringing together perspectives from the broader Illinois ecosystem, ISWN is developing curricula aligned with industry needs, offering career counseling, and connecting students with employers. This effort not only opens doors to high-quality jobs but also helps meet the rapidly growing workforce demands of the industry.

Undergraduate Research Opportunities

I invite motivated undergraduate students from Electrical Engineering and Physics to reach out to me for research opportunities in the area of modeling and simulation of nanoelectronic devices, as well as the co-design and co-optimization of materials, devices, and circuits for energy-efficient computing.

Graduate Research Opportunities

If you are interested in conducting your doctoral research in my group, please email me with a copy of your CV, research statement, and a short slide deck with an overview of your prior research experience and future goals. Please note that I will not be responding to inquiries that are outside of my current research interests.

Primary Research Area

• OLD Quantum Nanoelectronics and Nanophotonics

Research Areas

• Nanoscale Devices For Ultralow Power Computing
• OLD Quantum Nanoelectronics and Nanophotonics
• Power Electronics
• Ultra High Speed Electronic System

For More Information

• Center for Advanced Semiconductor Chips with Accelerated Performance (ASAP)
• G-Scholar Page
• Research Gate Profile
• Illinois Semiconductor Workforce Network (ISWN)

Books Authored or Co-Authored (Original Editions)

• The Next Era of Hardware Security: A Perspective on Emerging Technologies for Secure Electronics, Springer, 2021. ISBN-13: 978-3030857912 ISBN-10: 3030857913 Authors: Nikhil Rangarajan, Satwik Patnaik, Johann Knechtel, Shaloo Rakheja, Ozgur Sinanoglu

Chapters in Books

• S. Rakheja, A. Ceyhan, A. Naeemi. Interconnect considerations. CMOS and Beyond: Logic Switches for Terascale Integrated Circuits. K. Kuhn (Eds.), ch. 15, pp. 911-960, Cambridge University Press, 2015. (invited)
• S. Rakheja, A. Naeemi. Communicating novel computational state variables in post- CMOS logic. IEEE Nanotechnology Magazine, vol. 7, no. 1, pp. , 2013. (invited)
• S. Rakheja, A. Naeemi. On physical limits and challenges of graphene nanoribbons as interconnects for all-spin logic. Nanoelectronic Device Applications Handbook. J. Morris and K. Iniewski (Eds.), ch. 64, pp. 807-826, CRC Press, 2015. (invited)
• S. Rakheja, A. Naeemi. Interconnects for alternative state variables. Graphene Nanoelectronics: From Materials to Circuits. R. Murali (Ed.), ch. 5, pp. 113-136, Springer, 2011. (invited)
• Contributed to the chapter on Emerging Interconnects. International Technology Roadmap for Semiconductors (ITRS), 2011. (invited)

Monographs

• N. Rangarajan, S. Ament, A. Parthasarthy, S. Rakheja. (2017). Solving the stochastic Landau-Lifshitz-Gilbert-Slonczewski equation for monodomain nanomagnets : A survey and analysis of numerical techniques. URL: https://arxiv.org/abs/1607.04596

Selected Articles in Journals

• Lam, Bao, Yung Man Yu, Hyunjun Nam, Hsu-Chih Ni, Shomik Chatterjee, Shaloo Rakheja, Jian-Min Zuo, and Qing Cao. "Monolithic three-dimensional integration of silicon transistors." Nature (2026): 1-8.
• Nandi, Soumak, Ethan White, Qinghui Shao, Bikramjit Chatterjee, Clint D. Frye, Dylan M. Evans, Mohamadali Malakoutian, Srabanti Chowdhury, Lars Voss, and Shaloo Rakheja. "Physical Modeling and Design of a Nonvolatile Optically Gated High-Power Diamond Transistor." physica status solidi (a) 223, no. 11 (2026): e70395.
• Lee, Hanwool, Junzhe Kang, Ye Lin, Xiaotong Xu, Zijing Zhao, Hojoon Ryu, Ashwin Tunga, Ankit Shukla, Shaloo Rakheja, and Wenjuan Zhu. "Nonvolatile Sequential Logic Enabled by CuInP2S6 van der Waals Ferroelectric Field-Effect Transistors." ACS nano 20, no. 22 (2026): 16203-16215.
• Dastider, Ankan Ghosh, Matt Grupen, Nicholas C. Miller, and Shaloo Rakheja. "Hot LO phonon-induced RF nonlinearity in GaN high-electron-mobility transistors." APL Electronic Devices 2, no. 3 (2026).
• Tunga, Ashwin, Junzhe Kang, Zijing Zhao, Ankit Shukla, Wenjuan Zhu, and Shaloo Rakheja. "Benchmarking of Emerging Material-Based TCAMs." IEEE Journal on Exploratory Solid-State Computational Devices and Circuits (2026).
• Afrid, Sheikh Mohd Ta-Seen, He Lin Zhao, Arend M. van der Zande, and Shaloo Rakheja. "Strain-tunable inter-valley scattering defines universal mobility enhancement in n-and p-type 2D TMDs." npj 2D Materials and Applications (2026).
• Dastider, Ankan Ghosh, Matt Grupen, Ashwin Tunga, and Shaloo Rakheja. "Physics-based Full-band GaN HEMT Simulation Suggests Upper Bound of LO Phonon Lifetime." Journal of Applied Physics, 139, no. 7, 074502, 2026.
• Qian, Siyuan, Ankit Shukla, and Shaloo Rakheja. "Influence of thermal noise on the field-driven dynamics of the non-collinear antiferromagnet Mn3Sn." Applied Physics Letters 127, no. 20 (2025).
• Kang, Junzhe, Hanwool Lee, Ashwin Tunga, Xiaotong Xu, Ye Lin, Zijing Zhao, Hojoon Ryu et al. "Non-volatile reconfigurable four-mode van der waals transistors and transformable logic circuits." Acs Nano 19, no. 13 (2025): 12948-12959.
• Chung, Sheng-Ti, Catherine Langpoklakpam, Yicong Dong, Yi-Kai Hsiao, Shaloo Rakheja, Hao-Chung Kuo, Dong-Sing Wuu et al. "Effect of the AlGaO Spacer Layer on the Performance of β-Gallium Oxide Metal–Oxide Semiconductor Field Effect Transistors." Advanced Electronic Materials 11, no. 15 (2025): e00291.
• Dong, Yicong, Eiji Yagyu, Takashi Matsuda, Koon Hoo Teo, Chungwei Lin, and Shaloo Rakheja. "An accurate electrical and thermal co-simulation framework for modeling high-temperature DC and pulsed I-V characteristics of GaN HEMTs." IEEE Journal of the Electron Devices Society 13 (2025): 54-65.
• Shukla, Ankit, Siyuan Qian, and Shaloo Rakheja. "Spintronic devices and applications using noncollinear chiral antiferromagnets." Nanoscale Horizons 10, no. 3 (2025): 484-511.
• Cruz-Camacho, Elkin, Siyuan Qian, Ankit Shukla, Neil McGlohon, Shaloo Rakheja, and Christopher Carothers. "Performance evaluation of spintronic-based spiking neural networks using parallel discrete-event simulation." ACM Transactions on Modeling and Computer Simulation 35, no. 1 (2024): 1-30.
• Chan, Clarence Y., Jan Paul Menzel, Yicong Dong, Zhuoran Long, Aadil Waseem, Xihang Wu, Yixin Xiao et al. "Demystifying metal-assisted chemical etching of GaN and related heterojunctions." Applied Physics Reviews 11, no. 2 (2024).
• Rehm, Laura, Md Golam Morshed, Shashank Misra, Ankit Shukla, Shaloo Rakheja, Mustafa Pinarbasi, Avik W. Ghosh, and Andrew D. Kent. "Temperature-resilient random number generation with stochastic actuated magnetic tunnel junction devices." Applied Physics Letters 124, no. 5 (2024).
• Zhao, Zijing, Junzhe Kang, Shaloo Rakheja, and Wenjuan Zhu. "Control-gate-free reconfigurable transistor based on 2D MoTe2 with asymmetric gating." Applied Physics Letters 124, no. 7 (2024).
• Zhao, Zijing, Junzhe Kang, Ashwin Tunga, Hojoon Ryu, Ankit Shukla, Shaloo Rakheja, and Wenjuan Zhu. "Content-addressable memories and transformable logic circuits based on ferroelectric reconfigurable transistors for in-memory computing." ACS nano 18, no. 4 (2024): 2763-2771.
• Ryu, Hojoon, Junzhe Kang, Minseong Park, Byungjoon Bae, Zijing Zhao, Shaloo Rakheja, Kyusang Lee, and Wenjuan Zhu. "Low-thermal-budget ferroelectric field-effect transistors based on CuInP2S6 and InZnO." ACS Applied Materials & Interfaces 15, no. 46 (2023): 53671-53677.
• Shukla, Ankit, Siyuan Qian, and Shaloo Rakheja. "Impact of strain on the SOT-driven dynamics of thin film Mn3Sn." Journal of Applied Physics 135, no. 12 (2024).
• Shukla, Ankit, Siyuan Qian, and Shaloo Rakheja. "Order parameter dynamics in Mn3Sn driven by DC and pulsed spin–orbit torques." APL Materials 11, no. 9 (2023).
• Qian, Siyuan, and Shaloo Rakheja. "Modeling and evaluation of echo-state networks using spin torque nano-oscillators." IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 9, no. 2 (2023): 134-142. 
• Rakheja, Shaloo, Zhihong Chen, and Ching-Tzu Chen. "Guest Editorial: Dimensional Scaling of Material Functional Properties to Meet Back-End-of-Line (BEOL) Challenges." Applied Physics Letters 123, no. 3 (2023).
• Dong, Yicong, Karen Dowling, Soroush Ghandiparsi, Lars Voss, and Shaloo Rakheja. "Observation and Modeling of Near-Bistable Dark-Mode Current-Voltage Characteristics in Semi-Insulating Gallium Arsenide With Implications for Photoconductors." IEEE Journal of the Electron Devices Society 11 (2023): 385-398.
• Tunga, Ashwin, Zijing Zhao, Ankit Shukla, Wenjuan Zhu, and Shaloo Rakheja. "Physics-based modeling and validation of 2-D Schottky barrier field-effect transistors." IEEE Transactions on Electron Devices 70, no. 4 (2023): 2034-2041.
• Kang, Junzhe, Shaloo Rakheja, and Wenjuan Zhu. "Reconfigurable transistors based on van der Waals heterostructures." MRS Advances 8, no. 14 (2023): 773-779.
• Tunga, Ashwin, Kexin Li, Ethan White, Nicholas C. Miller, Matt Grupen, John D. Albrecht, and Shaloo Rakheja. "A comparison of a commercial hydrodynamics TCAD solver and Fermi kinetics transport convergence for GaN HEMTs." Journal of Applied Physics 132, no. 22 (2022). Editor's Pick. https://csl.illinois.edu/news/52728
• Dong, Yicong, Karen M. Dowling, Stefan P. Hau-Riege, Adam Conway, Lars F. Voss, and Shaloo Rakheja. "Design considerations for gallium arsenide pulse compression photoconductive switch." Journal of Applied Physics 131, no. 13 (2022).
• Shukla, Ankit, and Shaloo Rakheja. "Spin-torque-driven terahertz auto-oscillations in noncollinear coplanar antiferromagnets." Physical Review Applied 17, no. 3 (2022): 034037.
• Rangarajan, Nikhil, Satwik Patnaik, Johann Knechtel, Ramesh Karri, Ozgur Sinanoglu, and Shaloo Rakheja. "Opening the doors to dynamic camouflaging: Harnessing the power of polymorphic devices." IEEE Transactions on Emerging Topics in Computing 10, no. 1 (2020): 137-156.
• Dowling, Karen, Yicong Dong, David Hall, Saptarshi Mukherjee, Joseph D. Schneider, Stefan Hau-Riege, Sara E. Harrison et al. "Pulse compression photoconductive switching using negative differential mobility." IEEE Transactions on Electron Devices 69, no. 2 (2021): 590-596.
• Mukherjee, Saptarshi, Karen Dowling, Yicong Dong, Kexin Li, Adam Conway, Shaloo Rakheja, and Lars Voss. "A Prony-based curve-fitting method for characterization of RF pulses from optoelectronic devices." IEEE Signal Processing Letters 29 (2021): 364-368.
• Zhao, Zijing, Shaloo Rakheja, and Wenjuan Zhu. "Nonvolatile reconfigurable 2D Schottky barrier transistors." Nano letters 21, no. 21 (2021): 9318-9324.
• Hoo Teo, Koon, Yuhao Zhang, Nadim Chowdhury, Shaloo Rakheja, Rui Ma, Qingyun Xie, Eiji Yagyu, Koji Yamanaka, Kexin Li, and Tomás Palacios. "Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects." Journal of Applied Physics 130, no. 16 (2021).
• Farzaneh, S. M., and Shaloo Rakheja. "Spin splitting and spin Hall conductivity in buckled monolayers of group 14: First-principles calculations." Physical Review B 104, no. 11 (2021): 115205.
• Rakheja, Shaloo, Kexin Li, Karen M. Dowling, Adam M. Conway, and Lars F. Voss. "Design and simulation of near-terahertz GaN photoconductive switches–operation in the negative differential mobility regime and pulse compression." IEEE Journal of the Electron Devices Society 9 (2021): 521-532.
• Mahmood, Ather, Will Echtenkamp, Mike Street, Jun-Lei Wang, Shi Cao, Takashi Komesu, Peter A. Dowben et al. "Voltage controlled Néel vector rotation in zero magnetic field." Nature communications 12, no. 1 (2021): 1674.
• Parthasarathy, Arun, Egecan Cogulu, Andrew D. Kent, and Shaloo Rakheja. "Precessional spin-torque dynamics in biaxial antiferromagnets." Physical Review B 103, no. 2 (2021): 024450.
• Farzaneh, S. M., and Shaloo Rakheja. "Intrinsic spin Hall effect in topological insulators: A first-principles study." Physical Review Materials 4, no. 11 (2020): 114202.
• Rakheja, S., L. Huang, Stefan Hau-Riege, S. E. Harrison, Lars F. Voss, and Adam M. Conway. "Performance modeling of silicon carbide photoconductive switches for high-power and high-frequency applications." IEEE Journal of the Electron Devices Society 8 (2020): 1118-1128.
• Rakheja, Shaloo, Parijat Sengupta, and Suhaila M. Shakiah. "Design and circuit modeling of graphene plasmonic nanoantennas." IEEE Access 8 (2020): 129562-129575.
• Shukla, Ankit, Arun Parthasarathy, and Shaloo Rakheja. "Switching time of spin-torque-driven magnetization in biaxial ferromagnets." Physical Review Applied 13, no. 5 (2020): 054020.
• Rangarajan, Nikhil, Satwik Patnaik, Johann Knechtel, Ozgur Sinanoglu, and Shaloo Rakheja. "SMART: A secure magnetoelectric antiferromagnet-based tamper-proof non-volatile memory." IEEE Access 8 (2020): 76130-76142.
• Sengupta, Parijat, and Shaloo Rakheja. "Spin-valley coupled thermoelectric energy converter with strained honeycomb lattices." Physica E: Low-dimensional Systems and Nanostructures 118 (2020): 113862.
• Farzaneh, S. M., and Shaloo Rakheja. "Extrinsic spin-orbit coupling and spin relaxation in phosphorene." Physical Review B 100, no. 24 (2019): 245429.
• Yarmoghaddam, E., Haratipour, N., Koester, S. J., & Rakheja, S. (2019). A Physics-Based Compact Model for Ultrathin Black Phosphorus FETs-Part I: Effect of Contacts, Temperature, Ambipolarity, and Traps. IEEE Transactions on Electron Devices, 67(1), 389-396.
• Yarmoghaddam, E., Haratipour, N., Koester, S. J., & Rakheja, S. (2019). A Physics-Based Compact Model for Ultrathin Black Phosphorus FETs-Part II: Model Validation Against Numerical and Experimental Data. IEEE Transactions on Electron Devices, 67(1), 397-405.
• Li, K., & Rakheja, S. (2019). Modeling and Simulation of Quasi-Ballistic III-Nitride Transistors for RF and Digital Applications. International Journal of High Speed Electronics and Systems, 28(01n02), 1940011.
• Patnaik, S., Rangarajan, N., Knechtel, J., Sinanoglu, O., & Rakheja, S. (2019). Spin-orbit torque devices for hardware security: From deterministic to probabilistic regime. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol. 39, no. 8, pp. 1591-1606, 2020.
• Rakheja, S., Flatte, M. E., & Kent, A. D. (2019). Voltage-Controlled Topological Spin Switch for Ultralow-Energy Computing: Performance Modeling and Benchmarking. Physical Review Applied, 11(5), 054009.
• Yarmoghaddam, E., Haratipour, N., Koester, S. J., & Rakheja, S. (2019). A virtual-source emission-diffusion IV model for ultra-thin black phosphorus field-effect transistors. Journal of Applied Physics, 125(16), 165706.
• Li, K., & Rakheja, S. (2019). A unified static-dynamic analytic model for ultra-scaled III-nitride high electron mobility transistors. Journal of Applied Physics, 125(13), 134503.
• Parthasarathy, A., & Rakheja, S. (2019). Dynamics of magnetoelectric reversal of an antiferromagnetic domain. Physical Review Applied, 11(3), 034051.
• Rangarajan, N., Patnaik, S., Knechtel, J., Sinanoglu, S., & Rakheja, S. (2019). Spin-based reconfigurable logic for power-and area-efficient applications. IEEE Design & Test, 36(3), 22-30.
• Li, K., & Rakheja, S. (2018). Analytic modeling of nonlinear current conduction in access regions of III-nitride HEMTs. MRS Advances, 3(3), 131-136.
• Farzaneh, SM & Rakheja, S. (2018). Spin relaxation due to the D'yakonov-Perel' mechanism in 2D semiconductors with an elliptic band structure. arXiv preprint arXiv:1806.09488.
• Parthasarathy, A., & Rakheja, S. (2018). Reversal time of jump-noise dynamics for large nucleation. IEEE Transactions on Magnetics, 55(2), 1-3.
• Li, K., & Rakheja, S. (2018). An analytic current-voltage model for quasi-ballistic III-nitride high electron mobility transistors. Journal of Applied Physics, 123(18), 184501.
• Parthasarathy, A., & Rakheja, S. (2018). Reversal time of jump-noise magnetization dynamics in nanomagnets via Monte Carlo simulations. Journal of Applied Physics, 123(22), 223901. (Appeared as the cover article of the journal).
• Rakheja, S. (2018). Terahertz band communication using plasma wave propagation in multilayer graphene heterostructures. IET Cyber-Physical Systems: Theory & Applications, 3(2), 89-98.
• Kani, N., Rakheja, S., & Naeemi, A. (2018). Analytic modeling of dipolar field requirements for robust coupling in a non-identical biaxial two-magnet system. Journal of Applied Physics, 124(2), 023901. (Appeared as the cover article of the journal).
• Kani, N., Naeemi, A., & Rakheja, S. (2017). Non-monotonic probability of thermal reversal in thin-film biaxial nanomagnets with small energy barriers. AIP Advances, 7(5), 056006.
• Rakheja, S., & Kani, N. (2017). Spin pumping driven auto-oscillator for phase-encoded logic--device design and material requirements. AIP Advances, 7(5), 055905.
• Rangarajan, N., Parthasarathy, A., & Rakheja, S. (2017). A spin-based true random number generator exploiting the stochastic precessional switching of nanomagnets. Journal of applied physics, 121(22), 223905.
• Sengupta, P., & Rakheja, S. (2017). Anisotropy-driven quantum capacitance in multi-layered black phosphorus. Applied Physics Letters, 111(16), 161902.
• Farzaneh, S. M., & Rakheja, S. (2017). Voltage tunable plasmon propagation in dual gated bilayer graphene. Journal of Applied Physics, 122(15), 153101.
• Yarmoghaddam, E., & Rakheja, S. (2017). Dispersion characteristics of THz surface plasmons in nonlinear graphene-based parallel-plate waveguide with Kerr-type core dielectric. Journal of Applied Physics, 122(8), 083101.
• Rangarajan, N., Parthasarathy, A., Kani, N., & Rakheja, S. (2017). Energy-efficient computing with probabilistic magnetic bits--Performance modeling and comparison against probabilistic CMOS logic. IEEE Transactions on Magnetics, 53(11), 1-10.
• Petrov, V., Moltchanov, D., Komar, M., Antonov, A., Kustarev, P., Rakheja, S., & Koucheryavy, Y. (2017). Terahertz band intra-chip communications: Can wireless links scale modern x86 cpus?. IEEE Access, 5, 6095-6109.
• Rakheja, S. (2016). On the Gaussian pulse propagation through multilayer graphene plasmonic waveguides—Impact of electrostatic screening and frequency dispersion on group velocity and pulse distortion. IEEE Transactions on Nanotechnology, 15(6), 936-946.
• Kani, N., Rakheja, S., & Naeemi, A. (2016). A probability-density function approach to capture the stochastic dynamics of the nanomagnet and impact on circuit performance. IEEE Transactions on Electron Devices, 63(10), 4119-4126.
• Rakheja, S., & Sengupta, P. (2016). The tuning of light-matter coupling and dichroism in graphene for enhanced absorption: Implications for graphene-based optical absorption devices. Journal of Physics D: Applied Physics, 49(11), 115106.
• Rakheja, S., & Sengupta, P. (2015). Gate-Voltage Tunability of Plasmons in Single-Layer Graphene Structures: Analytical Description, Impact of Interface States, and Concepts for Terahertz Devices. IEEE Transactions on Nanotechnology, 15(1), 113-121.
• Rakheja, S., Lundstrom, M. S., & Antoniadis, D. A. (2015). An improved virtual-source-based transport model for quasi-ballistic transistors--Part II: Experimental Verification. IEEE Transactions on Electron Devices, 62(9), 2794-2801.
• Rakheja, S., Lundstrom, M. S., & Antoniadis, D. A. (2015). An improved virtual-source-based transport model for quasi-ballistic transistors--Part I: Capturing effects of carrier degeneracy, drain-bias dependence of gate capacitance, and nonlinear channel-access resistance. IEEE Transactions on Electron Devices, 62(9), 2786-2793.
• Rakheja, S., Wu, Y., Wang, H., Palacios, T., Avouris, P., & Antoniadis, D. A. (2014). An ambipolar virtual-source-based charge-current compact model for nanoscale graphene transistors. IEEE Transactions on Nanotechnology, 13(5), 1005-1013.
• Bonhomme, P., Manipatruni, S., Iraei, R. M., Rakheja, S., Chang, S. C., Nikonov, D. E., ... & Naeemi, A. (2014). Circuit simulation of magnetization dynamics and spin transport. IEEE Transactions on Electron Devices, 61(5), 1553-1560.
• Rakheja, S., Chang, S. C., & Naeemi, A. (2013). Impact of dimensional scaling and size effects on spin transport in copper and aluminum interconnects. IEEE transactions on electron devices, 60(11), 3913-3919.
• Rakheja, S., & Naeemi, A. (2013). Roles of doping, temperature, and electric field on spin transport through semiconducting channels in spin valves. IEEE transactions on nanotechnology, 12(5), 796-805.
• Rakheja, S., Kumar, V., & Naeemi, A. (2013). Evaluation of the potential performance of graphene nanoribbons as on-chip interconnects. Proceedings of the IEEE, 101(7), 1740-1765.
• Kumar, V., Rakheja, S., & Naeemi, A. (2012). Performance and energy-per-bit modeling of multilayer graphene nanoribbon conductors. IEEE transactions on electron devices, 59(10), 2753-2761.
• Rakheja, S., & Naeemi, A. (2011). Graphene nanoribbon spin interconnects for nonlocal spin-torque circuits: Comparison of performance and energy per bit with CMOS interconnects. IEEE transactions on electron devices, 59(1), 51-59.
• Rakheja, S., & Naeemi, A. (2011). Modeling interconnects for post-CMOS devices and comparison with copper interconnects. IEEE Transactions on Electron Devices, 58(5), 1319-1328.
• Rakheja, S., & Naeemi, A. (2010). Interconnects for novel state variables: Performance modeling and device and circuit implications. IEEE Transactions on Electron Devices, 57(10), 2711-2718.
• Kar, S., Rawat, S., Rakheja, S., & Reddy, D. (2005). Characterization of accumulation layer capacitance for extracting data on high-kappa gate dielectrics. IEEE Transactions on Electron Devices, 52(6), 1187-1193.

Articles in Conference Proceedings

• Afrid, Sheikh Mohd Ta-Seen, He Lin Zhao, Arend M. Van Der Zande, and Shaloo Rakheja. "Strain-Driven Control of Carrier Injection at Pristine and Defective n-and p-Type Metal–TMD Interfaces." In 2026 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA), pp. 1-2. IEEE, 2026.
• Samdani, G.M., Shukla, A. and Rakheja, S., 2025, June. A Custom End-to-End Modeling Suite for Ferroelectric Devices. In 2025 Device Research Conference (DRC) (pp. 1-2). IEEE.
• Voss, L., Shao, Q., Frye, C.D., Evans, D., Chatterjee, B., White, E., Soumak, N., Rakheja, S., Malakoutian, M., Chowdhury, S. and Giardine, F., 2025, November. Diamond optically gated junction field effect transistors. In Electrochemical Society Meeting Abstracts 248 (No. 35, pp. 1717-1717). The Electrochemical Society, Inc..
• Samdani, Golam Mahmud, Ankit Shukla, and Shaloo Rakheja. "Switching Dynamics of Multidomain Ferroelectric Devices: Physical Modeling Approaches, Experimental Validation, and Design-Space Exploration." In 2025 IEEE 25th International Conference on Nanotechnology (NANO), pp. 217-221. IEEE, 2025.
• Tunga, Ashwin, Matt Grupen, and Shaloo Rakheja. "A full 3D TCAD framework for nanosheet transistors including quantum-confined channels." In 2025 International Workshop on Computational Nanotechnology (IWCN), pp. 1-2. 2025.
• Rakheja, Shaloo. "A materials-and devices-centric approach to neuromorphic computing." In Proceedings of the 43rd IEEE/ACM International Conference on Computer-Aided Design, pp. 1-9. 2024. (invited)
• Tunga, Ashwin, Junzhe Kang, Ziing Zhao, Ankit Shukla, Wenjuan Zhu, and Shaloo Rakheja. "Modeling of Content addressable memory using 2D Reconfigurable Transistors." In 2024 Device Research Conference (DRC), pp. 1-2. IEEE, 2024.
• Tunga, Ashwin, Michael Shur, Matt Grupen, David Hill, and Shaloo Rakheja. "Simulating Terahertz Plasma Oscillations in Transistors." In 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 1-4. IEEE, 2024.
• Zhou, Yi, Hanzhi Ma, Junwei Yu, Tahsin Shameem, Zohreh Salehi, Shaloo Rakheja, Erping Li, and José E. Schutt-Ainé. "Latency insertion method for accelerated simulation of memristor crossbar array in neuromorphic chip." In 2024 IEEE 74th Electronic Components and Technology Conference (ECTC), pp. 2200-2204. IEEE, 2024.
• Qian, Siyuan, Ankit Shukla, and Shaloo Rakheja. "Effect of thermal noise on the field-assisted spin-orbit-torque-driven dynamics in Mn 3 Sn." In APS March Meeting Abstracts, vol. 2024, pp. Z25-001. 2024.
• Pulugurtha, Sridevi, Kevin Daniel, and Shaloo Rakheja. "Spin Relaxation in Strained Graphene-TMD Heterostructures using Ab Initio Methods." In APS March Meeting Abstracts, vol. 2024, pp. F62-008. 2024. (Best in session)
• Shukla, Ankit, Siyuan Qian, and Shaloo Rakheja. "Field-assisted spin-orbit-torque-driven dynamics in monodomain Mn3Sn with perpendicular magnetic anisotropy." In 2023 IEEE Conference and APS 68th Annual Conference on Magnetism and Magnetic Materials (MMM), pp. 1, 2023.
• Tunga, Ashwin, Wenjuan Zhu, and Shaloo Rakheja. "Effects of process variability on performance of reconfigurable transistors based content addressable memory." In 2023 Semiconductor Research Conference (SRC) Techcon, pp. 1-2, 2023.
• Shukla, Ankit, Wenjuan Zhu, and Shaloo Rakheja. "All-ferroelectric implementation of Ising machines." In 2023 Semiconductor Research Conference (SRC) Techcon, pp. 1-2, 2023.
• White, Ethan, Ashwin Tunga, Nicholas C. Miller, Matt Grupen, John D. Albrecht, and Shaloo Rakheja. "Large-signal modeling of GaN HEMTs using Fermi kinetics and commercial hydrodynamics transport." In 2023 Device Research Conference (DRC), pp. 1-2. IEEE, 2023.
• Shukla, Ankit, Laura Heller, Md Golam Morshed, Laura Rehm, Avik W. Ghosh, Andrew D. Kent, and Shaloo Rakheja. "A true random number generator for probabilistic computing using stochastic magnetic actuated random transducer devices." In 2023 24th International Symposium on Quality Electronic Design (ISQED), pp. 1-10. IEEE, 2023.
• Morshed, Md Golam, Ankit Shukla, Laura Rehm, Laura Heller, Yunkun Xie, Samiran Ganguly, Shaloo Rakheja, Andrew Kent, and Avik Ghosh. "Probabilistic spin-torque switching of perpendicular magnetic tunnel junctions under short current pulses." In APS March Meeting Abstracts, vol. 2023, pp. Z54-001. 2023.
• Kang, Junzhe, Shaloo Rakheja, and Wenjuan Zhu. "Reconfigurable Logic Transistors Based on 2D Heterostructures." In APS March Meeting Abstracts, vol. 2023, pp. Q34-009. 2023.
• Dong, Yicong, and Shaloo Rakheja. "Role of deep levels in semi-insulating gallium arsenide pulse-compression photoconductive switches." In APS March Meeting Abstracts, vol. 2023, pp. F42-003. 2023.
• Kang, Junzhe, Shaloo Rakheja, and Wenjuan Zhu. "Reconfigurable Transistors based on Van der Waals Heterostructures." In 2022 Semiconductor Research Conference (SRC) Techcon, pp. 1-2, 2022.
• Zhao, Zijing, Kai Xu, Jialun Liu, Wei Jiang, Hojoon Ryu, Shaloo Rakheja, Tony Low, and Wenjuan Zhu. "Nanoscale Devices Based on Two-dimensional and Ferroelectric Materials." In 2022 Device Research Conference (DRC), pp. 1-2. IEEE, 2022.
• Cruz-Camacho, Elkin, Siyuan Qian, Ankit Shukla, Neil McGlohon, Shaloo Rakheja, and Christopher D. Carothers. "Evaluating performance of spintronics-based spiking neural network chips using parallel discrete event simulation." In Proceedings of the 2022 ACM SIGSIM Conference on Principles of Advanced Discrete Simulation, pp. 69-80. 2022.
• Wu, Bohao, and Shaloo Rakheja. "Modeling of the Charge-Voltage Characteristics of AlScN/AlN/GaN Heterostructures." In 2022 Device Research Conference (DRC), pp. 1-1. IEEE, 2022.
• Li, Kexin, Takashi Matsuda, Eiji Yagyu, Koon Hoo Teo, and Shaloo Rakheja. "Trapping Phenomena in GaN HEMTs with Fe-and C-doped Buffer." In Device Research Conference (DRC), pp. 1-2. 2022.
• K. Li., S. Rakheja. Physical Modeling of Quasi-ballistic GaN HEMTs Operating at Cryogenic Temperatures. In Compound Semiconductor Week (CSW), Michigan, Ann Arbor, June 1-3, 2022.
• Shukla, Ankit, Siyuan Qian, and Shaloo Rakheja. "Dipolarly coupled nanomagnets as hardware emulators of neurons for brain-like computing systems." In APS March Meeting Abstracts, vol. 2022, pp. B54-005. 2022.
• Shah, Syed Qamar Abbas, Ather Mahmood, Will Echtenkamp, Junlei Wang, Mike Street, Takashi Komesu, Peter Dowben et al. "Voltage-controlled Néel vector rotation in zero magnetic field in high-T N magnetoelectric thin films." In APS March Meeting Abstracts, vol. 2022, pp. T00-212. 2022.
• Tunga, Ashwin, Xiuling Li, and Shaloo Rakheja. "Modeling-based design and benchmarking of Al-rich AlGaN 3D nanosheet MOSFET and MOSHEMTs for RF Applications." In 2021 Device Research Conference (DRC), pp. 1-2. IEEE, 2021.
• Shukla, Ankit, and Shaloo Rakheja. "Terahertz auto oscillations in non-collinear coplanar metallic antiferromagnets." In 2021 Device Research Conference (DRC), pp. 1-2. IEEE, 2021.
• Shukla, Ankit, and Shaloo Rakheja. "Spin-torque driven self-oscillations in non-collinear coplanar antiferromagnets." In APS March Meeting Abstracts, vol. 2021, pp. F38-010. 2021.
• Parthasarathy, Arun and Shaloo Rakheja. "Spin-torque-induced chaos in antiferromagnets." In Magnetism and Magnetic Materials Conference, 2020.
• Li, Kexin, Eiji Yagyu, Hisashi Saito, Koon Hoo Teo, and Shaloo Rakheja. "Compact modeling of gate leakage phenomenon in GaN HEMTs." In 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 225-228. IEEE, 2020.
• Parthasarathy, Arun and Shaloo Rakheja. "Ultrafast and Energy-efficient Antiferromagnetic Memory and Oscillator." In 2020 Semiconductor Research Corporation Techcon, 2020.
• Shukla, Ankit, Arun Parthasarathy, and Shaloo Rakheja. "Analytic modeling of switching time dynamics of monodomain ferromagnets with biaxial energy landscape." Bulletin of the American Physical Society 65 (2020).
• A. Parthasarathy, N. Rangarajan, S. Rakheja. Strain-driven spin-Hall antiferromagnetic memory for 180° switching. Bulletin of the American Physical Society, 65, Mar. 5, 2020
• S.M. Farzaneh, S. Rakheja. Effective Hamiltonian for Extrinsic Spin-Orbit Coupling in 2D Materials. Bulletin of the American Physical Society, 65, Mar. 5, 2020.
• S. Rakheja, L. Huang, S. Hau-Riege, S.E. Harrison, L.F. Voss, A.M. Conway. Modeling and Design of SiC-based High-Frequency Photoconductive Switches. In IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Penang, Malaysia, 2020, pp. 1-4, doi: 10.1109/EDTM47692.2020.9117837.
• A. Parthasarathy, S. Rakheja. Theory of spin-current-induced auto-oscillations in a biaxial antiferromagnet. In Magnetism and Magnetic Materials Conference, Las Vegas, NV, Nov. 04-08, 2019.
• P. Sengupta, S. Rakheja. Spin-valley Coupled Caloritronics with Strained Honeycomb Lattices. In 2019 Device Research Conference (DRC), Ann Arbor, MI, USA, 2019, pp. 81-82, doi: 10.1109/DRC46940.2019.9046413.
• S. Rakheja, M. Flatte, A. D. Kent. Voltage-controlled topological spin-switch for approximate computing. Joint MMM-Intermag Conference, Washington D.C., Jan. 14-18, 2019.
• K. Li, S. Rakheja. A unified charge-current compact model of gallium nitride transistors for RF and digital applications. IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Singapore, Mar. 12-15, 2019. (Invited)
• A. Parthasarathy, S. Rakheja. Phenomenology of magnetoelectric switching of antiferromagnetic domain. Joint MMM-Intermag Conference, Washington D.C., Jan. 14-18, 2019.
• K. Li, S. Rakheja. Design and modeling of III-Nitride HEMTs for extremely linear RF operation. Materials Research Society (MRS) Meeting, Boston, Massachusetts, Nov. 25-30, 2018.
• S. Farzaneh, S. Rakheja. Spin relaxation in 2D semiconductors with an elliptic band structure. Materials Research Society (MRS) Meeting, Boston, Massachusetts, Nov. 25-30, 2018.
• S. Patnaik, N. Rangarajan, J. Knechtel, O. Sinanoglu, S. Rakheja. Advancing hardware security using polymorphic and stochastic spin-Hall effect devices. Design Automation and Test in Europe (DATE), Dresden, Germany, Mar. 19-23, 2018.
• K. Li, S. Rakheja. Nonlinearity of III-nitride HEMTs for RF applications--Analytical modeling and device design for enhanced dynamic range. Materials Research Society (MRS) Meeting, Boston, Massachusetts, Nov. 26-Dec. 01, 2017.
• S. Rakheja, N. Kani. Spin-torque nano-oscillator driven by spin pumping for phase- based neuromorphic computing. Materials Research Society (MRS) Meeting, Boston, Massachusetts, Nov. 26-Dec. 01, 2017.
• S. Rakheja, K. Li. Graphene-based plasma wave interconnects for on-chip communication in the terahertz band. Berkeley Symposium on Energy Efficient Electronic Systems & Steep Transistors Workshop, Berkeley, California, Oct. 19-20, 2017.
• N. Kani, S. Rakheja. Analytical reliability models for two-magnet systems. MAGNET, The 5th Italian Conference on Magnetism, Assisi, Italy, Sep. 13-15, 2017.
• S. Rakheja, N. Kani. Polymorphic spintronic logic gates for hardware security primitives-Device design and performance benchmarking. Nano Architectures (NANOARCH), Newport, Rhode Island, July 25-26, 2017.
• S. Rakheja, P. Sengupta. Graphene nanoribbon plasmonic waveguides: Fundamental lim- its and device implications. Device Research Conference (DRC), Santa Barbara, California, June 22-25, 2014.
• A. Naeemi, A. Ceyhan, V. Kumar, C. Pan, R. Mousavi, S. Rakheja. BEOL scaling limits and next generation technology prospects. Design Automation Conference (DAC), San Francisco, California, June 02-06, 2014 (Invited).
• S. Rakheja, H. Wang, T. Palacios, I. Meric, K. Shepard, D. Antoniadis. A unified charge- current compact model for ambipolar operation in quasi-ballistic graphene transistors: Experimental verification and circuit-analysis demonstration. IEEE Electron Devices Meeting (IEDM), Washington D.C., Dec. 09-12, 2013
• S. Rakheja, V. Kumar, A. Naeemi. Graphene nanoribbons for all-spin logic: Effects of dimensional scaling on spin transport. Semiconductor Research Corporation (SRC), TECHCON, Austin, Texas, Sep. 10-12, 2012 (Won the best in session award).
• S. Rakheja, A. Naeemi. Compact modeling of spin-transport parameters in semiconducting channels in non-local spin-torque devices. IEEE NANO, Birmingham, U.K., Aug. 20-23, 2012.
• S. Rakheja, V. Kumar, Comparison of electrical, optical and plasmonic on-chip interconnects based on delay and energy considerations. IEEE International Symposium on Quality Electronic Design (ISQED), Santa Clara, California. March 18-22, 2012.
• S. Rakheja, A. Naeemi. Interconnect analysis in spin-torque devices: Performance modeling, optimal repeater insertion, and circuit-size limits. IEEE International Symposium on Quality Electronic Design (ISQED), Santa Clara, California. March 18-22, 2012.

Pending Articles

• Emon, Jahid, Sheikh Mohd Ta-Seen Afrid, Dindoruk Birol, Shaloo Rakheja, and Jiajun He. "Interfacial tension of confined hydrocarbons in nitrogen-functionalized nanopores: Coupled effects of surface chemistry and confinement."  Langmuir. (2026). Under Review.
• Qian, Siyuan and Shaloo Rakheja. "Fokker-Planck framework for stochastic octupole dynamics in chiral antiferromagnet Mn3Sn."  Physical Review Applied. (2026). Submitted.
• Samdani, Golam Mahmud, Ankit Shukla, and Shaloo Rakheja. "Switching dynamics of multidomain ferroelectric devices."  IEEE Transactions on Nanotechnology. (2026). Under Review.
• Dong, Yicong, Matsuda E Yagyu, Chungwei C Lin, and Shaloo Rakheja. "Quantifying the cutoff frequency limits of a fabricated GaN HEMT technology using an experimentally calibrated MIT virtuak source GaNFET-RF model."  IEEE Journal of Electron Devices. (2026). Under Review.

Other Publications

• 5G Enabled Energy Innovation: Advanced Wireless Networks for Science, Workshop Report

Patents

• Pulse Compression Photoconductive Semiconductor Switches filed jointly with Lawrence Livermore National Laboratory on October 15, 2021 (U.S. Patent Application No. 17/502,681)
• High electron mobility transistor (HEMT) comprising stacked nanowire or nanosheet heterostructures filed on April 06, 2021 (U.S. Patent Application No. 63/171,443)

Research Honors

• State Medal (2000)
• Sangeeta Goel Memorial Award (2001)
• Academic Excellence Award (2002-2003)
• Intel PhD Fellowship (2011-2012)
• Graduate Research Excellence Award (2012)
• Best in Session Award Semiconductor Research Corporation (SRC), TECHCON, 2012 (2012)
• NYU Goddard Junior Faculty Fellowship (2018-2019)
• Intel Alumni Endowed Faculty Fellow (2023)
• Public Voices Fellow (2023-2024)
• Engineering Council Outstanding Advisor Award (2024)
• US NSF and the Ireland Sci. Foundation to "Foster Trans-Atlantic Inter-Disciplinary Collab." in Semiconductors & Microelectronics, 2024 (2024)
• Engineering Council Outstanding Advisor Award (2026)

Public Service Honors

• IEEE Electron Devices Society (EDS) golden reviewer (2014-2017)

For More Information

• Center for Advanced Semiconductor Chips with Accelerated Performance (ASAP)
• G-Scholar Page
• Research Gate Profile
• Illinois Semiconductor Workforce Network (ISWN)